Persamaan Ic Irfz44n

Posted By admin On 17.09.21

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IRFZ44N
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Type Designator: IRFZ44N

IRFZ44N is a widely used MOSFET transistor designed to use in variety of general purpose applications. The transistor possesses high speed switching capability which makes it ideal to use in applications where high speed switching is a crucial requirement. The transistor is capable to drive load of upto 49A and the max load voltage can be 55V. Aug 05, 2021 Persamaan Transistor C 5198 / Persamaan Ic Irfz44n - framelight.Telah terjual lebih dari 14. Harga murah di lapak aries store. Jual transistor d2052 pengganti c5198 pada ampli toa bagus dan murah di jual oleh ribuan toko online di indonesia inkuiri.com. Belanja online transistor 500k terbaik, terlengkap & harga termurah di lazada. 2sc5198 toshiba transistor silicon npn triple diffused type.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 41 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62 nC

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO220AB

IRFZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44N Datasheet (PDF)

0.1. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

0.2. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

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0.3. irfz44ns 1.pdf Size:57K _international_rectifier 3 sweep mac.

0.4. irfz44npbf.pdf Size:226K _international_rectifier

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

0.5. irfz44n 1.pdf Size:52K _international_rectifier

0.6. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

0.7. irfz44n.pdf Size:100K _international_rectifier

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.8. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.9. irfz44npbf.pdf Size:150K _infineon

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

0.10. irfz44nspbf irfz44nlpbf.pdf Size:334K _infineon

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.11. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

0.12. irfz44ns.pdf Size:257K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

0.13. irfz44n.pdf Size:100K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

Datasheet: IRFZ40, IRFZ40FI, IRFZ42, IRFZ44, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, 2SK2837, IRFZ44NL, IRFZ44NS, IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL.

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JUAL IRFZ44n,BELI IRFZ44n,HARGA IRFZ44n,DATASHEET IRFZ44n ..

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Data flow diagram visio stencil download.